收藏本站
PD- 96254
IRF7811WGPbF
HEXFET ? Power MOSFET for DC-DC Converters
?
?
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
?
?
?
?
?
Low Conduction Losses
Low Switching Losses
100% Tested for Rg
Lead-Free
Halogen-Free
S
S
S
1
2
3
8
7
6
A
D
D
D
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge. The reduced conduction
SO-8
G
4
T o p V ie w
5
D
and switching losses make it ideal for high efficiency DC-
DC converters that power the latest generation of
microprocessors.
DEVICE CHARACTERISTICS ?
The IRF7811WGPbF has been optimized for all parameters
that are critical in synchronous buck converters including
R DS(on) , gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811WGPbF offers particulary low R DS(on) and high
Cdv/dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical PCB
mount application.
Absolute Maximum Ratings
R DS (on)
Q G
Q sw
Q oss
IRF7811WGPbF
9.0m ?
22nC
10.1nC
12nC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
IRF7811WPbF
30
±12
Units
V
Continuous Drain or Source
T A = 25°C
I D
14
Current (V GS ≥ 4.5V)
Pulsed Drain Current ?
T L = 90°C
I DM
13
109
A
Power Dissipation
T A = 25°C
P D
3.1
W
T L = 90°C
3.0
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current ?
T J , T STG
I S
I SM
–55 to 150
3.8
109
°C
A
Thermal Resistance
Parameter
Max.
Units
Maximum Junction-to-Ambient ?
R θ JA
40
°C/W
Maximum Junction-to-Lead
www.irf.com
R θ JL
20
°C/W
1
07/10/09
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IRF7834PBF MOSFET N-CH 30V 19A 8-SOIC
IRF820STRRPBF MOSFET N-CH 500V 2.5A D2PAK
IRF820 MOSFET N-CH 500V 2.5A TO-220AB
IRF840LPBF MOSFET N-CH 500V 8A TO-262
IRF840STRRPBF MOSFET N-CH 500V 8A D2PAK
IRF8714GPBF MOSFET N-CH 30V 14A 8-SOIC
IRF8721GTRPBF MOSFET N-CH 30V 14A 8-SOIC
IRF9204PBF MOSFET P-CH 40V 74A TO-220AB
相关代理商/技术参数
IRF7811WHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 14A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 14A 8SOIC - Rail/Tube
IRF7811WPBF 功能描述:MOSFET 30V 1 N-CH HEXFET 12mOhms 15.6nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7811WTR 功能描述:MOSFET N-CH 30V 14A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IRF7811WTRHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 14A 8-Pin SOIC T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 14A 8SOIC - Tape and Reel
IRF7811WTRPBF 功能描述:MOSFET MOSFT 30V 14A 12mOhm 15.6nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7815PBF 功能描述:MOSFET 150V 1 N-CH HEXFET 43mOhms 25nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7815TRPBF 功能描述:MOSFET MOSFT 150V 5A 44mOhm 25nC Qg RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7820PBF 功能描述:MOSFET 200V, 3.7A, 78 mOhm 29 nC Qg, SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube